Invention Grant
- Patent Title: Manufacturing method of transparent electrode and mask thereof
- Patent Title (中): 透明电极的制造方法及其掩模
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Application No.: US13642550Application Date: 2012-10-09
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Publication No.: US08778573B2Publication Date: 2014-07-15
- Inventor: Cheng-hung Chen , Zui Wang
- Applicant: Shenzhen China Star Optoelectronics Technology Co., Ltd.
- Applicant Address: CN Shenzhen, Guangdong
- Assignee: Shenzhen China Star Optoelectronics Technology co., Ltd.
- Current Assignee: Shenzhen China Star Optoelectronics Technology co., Ltd.
- Current Assignee Address: CN Shenzhen, Guangdong
- Agent Andrew C. Cheng
- Priority: CN201210363684 20120926
- International Application: PCT/CN2012/082625 WO 20121009
- International Announcement: WO2014/047961 WO 20140403
- Main IPC: G02B5/20
- IPC: G02B5/20

Abstract:
The present invention provides a manufacturing method of transparent electrode and mask thereof. The method includes: forming a film on a glass substrate, and coating photo-resist on film; irradiating photo-resist through mask, wherein the mask at corresponding active area of liquid crystal panel forming, from outer area to inner area, at least a first area and a second area, gap of pattern corresponding to transparent electrode in first area being first gap, gap of pattern in second area being second gap, first gap being greater than corresponding default gap, difference between first gap and corresponding default gap being greater than difference between second gap and corresponding default gap: and performing photolithography and etching processes on substrate after exposure to form transparent electrodes on substrate. As such, the present invention can reduce gap errors of formed transparent electrodes in entire active area to improve display effect.
Public/Granted literature
- US20140087290A1 Manufacturing Method of Transparent Electrode and Mask Thereof Public/Granted day:2014-03-27
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