Invention Grant
US08778762B2 Methods of forming vertically-stacked structures, and methods of forming vertically-stacked memory cells
有权
形成垂直堆叠结构的方法，以及形成垂直堆叠的存储单元的方法
- Patent Title: Methods of forming vertically-stacked structures, and methods of forming vertically-stacked memory cells
- Patent Title (中): 形成垂直堆叠结构的方法，以及形成垂直堆叠的存储单元的方法
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Application No.: US13708789Application Date: 2012-12-07
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Publication No.: US08778762B2Publication Date: 2014-07-15
- Inventor: Saurabh Keshav , Scott Pook , Fatma Arzum Simsek-Ege
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
Some embodiments include methods of forming vertically-stacked structures, such as vertically-stacked memory cells. A first hardmask is formed over a stack of alternating electrically conductive levels and electrically insulative levels. A first opening is formed through the first hardmask and the stack. Cavities are formed to extend into the electrically conductive levels. A fill material is formed within the first opening and within the cavities. A second hardmask is formed over the first hardmask and over the fill material. A second opening is formed through the second hardmask. The second opening is narrower than the first opening. The second opening is extended into the fill material to form an upwardly-opening container from the fill material. Sidewalls of the upwardly-opening container are removed, while leaving the fill material within the cavities as a plurality of vertically-stacked structures.
Public/Granted literature
- US20140162418A1 Methods of Forming Vertically-Stacked Structures, and Methods of Forming Vertically-Stacked Memory Cells Public/Granted day:2014-06-12
Information query
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