发明授权
- 专利标题： Semiconductor device having two-way conduction characteristics, and electrostatic discharge protection circuit incorporating the same
- 专利标题（中）： 具有双向导通特性的半导体器件和包括该导电特性的静电放电保护电路
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申请号： US13742527申请日： 2013-01-16
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公开(公告)号： US08779519B1公开(公告)日： 2014-07-15
- 发明人: Wei-Yao Lin , Chung-Wei Wang , Yu-Lun Lu , Kuo-Ko Chen
- 申请人： Ili Technology Corporation
- 申请人地址： TW Jhubei, Hsinchu County
- 专利权人： Ili Technology Corporation
- 当前专利权人： Ili Technology Corporation
- 当前专利权人地址： TW Jhubei, Hsinchu County
- 代理机构： Nixon & Vanderhye P.C.
- 主分类号： H01L23/62
- IPC分类号： H01L23/62
摘要：
A semiconductor device includes an n-type first doped region for receiving an external voltage, an n-type second doped region and a p-type third doped regions all formed in a p-type substrate, and is configured to have a first threshold voltage for forward conduction between the first and second doped regions, and a second threshold voltage for forward conduction between the first and third doped regions. A current is drained by flowing through the first doped region, the substrate and the second doped region if the external voltage is greater than the first threshold voltage or by flowing through the third doped region, the substrate and the first doped region if the external voltage is less than the second threshold voltage.
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