发明授权
- 专利标题： Metal gate structure of a field effect transistor
- 专利标题（中）： 场效应晶体管的金属栅极结构
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申请号： US12643414申请日： 2009-12-21
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公开(公告)号： US08779530B2公开(公告)日： 2014-07-15
- 发明人: Peng-Soon Lim , Da-Yuan Lee , Kuang-Yuan Hsu
- 申请人： Peng-Soon Lim , Da-Yuan Lee , Kuang-Yuan Hsu
- 申请人地址： TW
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW
- 代理机构： Lowe Hauptman & Ham, LLP
- 主分类号： H01L29/78
- IPC分类号： H01L29/78
摘要：
The invention relates to integrated circuit fabrication, and more particularly to a Field Effect Transistor with a low resistance metal gate electrode. An exemplary structure for a gate electrode for a Field Effect Transistor comprises a lower portion formed of a first metal material having a recess and a first resistance; and an upper portion formed of a second metal material having a protrusion and a second resistance, wherein the protrusion extends into the recess, wherein the second resistance is lower than the first resistance.
公开/授权文献
- US20110147858A1 METAL GATE STRUCTURE OF A FIELD EFFECT TRANSISTOR 公开/授权日：2011-06-23
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