发明授权
- 专利标题： Semiconductor apparatus
- 专利标题（中）： 半导体装置
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申请号： US11896153申请日： 2007-08-30
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公开(公告)号： US08779584B2公开(公告)日： 2014-07-15
- 发明人: Toshiyuki Yokomae , Katsumichi Ueyanagi , Eiji Mochizuki , Yoshinari Ikeda
- 申请人： Toshiyuki Yokomae , Katsumichi Ueyanagi , Eiji Mochizuki , Yoshinari Ikeda
- 申请人地址： JP Kawasaki-shi
- 专利权人： Fuji Electric Co., Ltd.
- 当前专利权人： Fuji Electric Co., Ltd.
- 当前专利权人地址： JP Kawasaki-shi
- 代理商 Manabu Kanesaka
- 优先权： JP2006-281695 20061016
- 主分类号： H01L23/34
- IPC分类号： H01L23/34
摘要：
A semiconductor apparatus equipped with at least one semiconductor element includes a metallic plate bonded to an upper surface of the semiconductor element and a conductor plate, bonded to the metallic plate and serving as an electric current path of the semiconductor apparatus. The conductor plate and the metallic plate are bonded to each other by laser welding at a part other than a part directly above the semiconductor element. As a result, heat damage caused by laser welding can be reduced.
公开/授权文献
- US20080087994A1 Semiconductor apparatus 公开/授权日：2008-04-17