Invention Grant
US08779605B2 Method and apparatus providing integrated circuit having redistribution layer with recessed connectors
有权
提供集成电路的方法和装置，其具有带凹入连接器的再分配层
- Patent Title: Method and apparatus providing integrated circuit having redistribution layer with recessed connectors
- Patent Title (中): 提供集成电路的方法和装置，其具有带凹入连接器的再分配层
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Application No.: US13605621Application Date: 2012-09-06
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Publication No.: US08779605B2Publication Date: 2014-07-15
- Inventor: David Pratt
- Applicant: David Pratt
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dickstein Shapiro LLP
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40
Abstract:
A method of making a semiconductor die includes forming a trench around a conductive stud extending from the first side to a second side of a substrate to expose a portion of the stud and then forming a conductive layer inside the trench and in electrical contact with the stud.
Public/Granted literature
- US20120326330A1 METHOD AND APPARATUS PROVIDING INTEGRATED CIRCUIT HAVING REDISTRIBUTION LAYER WITH RECESSED CONNECTORS Public/Granted day:2012-12-27
Information query
IPC分类:
