Invention Grant
- Patent Title: Gate-stress test circuit without test pad
- Patent Title (中): 没有测试垫的门应力测试电路
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Application No.: US13708812Application Date: 2012-12-07
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Publication No.: US08779804B2Publication Date: 2014-07-15
- Inventor: Lin Li
- Applicant: STMicroelectronics (Shenzhen) R&D Co. Ltd.
- Applicant Address: CN Shenzhen
- Assignee: STMicroelectronics (Shenzhen) R&D Co. Ltd.
- Current Assignee: STMicroelectronics (Shenzhen) R&D Co. Ltd.
- Current Assignee Address: CN Shenzhen
- Agency: Hogan Lovells US LLP
- Priority: CN201110461952 20111231
- Main IPC: H03K3/00
- IPC: H03K3/00

Abstract:
A high side driver circuit includes a driver stage having an input, an output, a first power terminal and a second power terminal, a transistor having a first power terminal, a second power terminal, and a control terminal coupled to the output of the driver stage, and a switch coupled between the second power terminal of the driver stage and the second power terminal of the transistor.
Public/Granted literature
- US20130169318A1 GATE-STRESS TEST CIRCUIT WITHOUT TEST PAD Public/Granted day:2013-07-04
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