发明授权
- 专利标题: Method for cleaning platinum residues on a semiconductor substrate
- 专利标题(中): 清洗半导体衬底上的铂残留物的方法
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申请号: US13276973申请日: 2011-10-19
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公开(公告)号: US08784572B2公开(公告)日: 2014-07-22
- 发明人: Anh Duong , Sean Barstow , Olov Karlsson , Bei Li , James Mavrinac
- 申请人: Anh Duong , Sean Barstow , Olov Karlsson , Bei Li , James Mavrinac
- 申请人地址: US CA San Jose
- 专利权人: Intermolecular, Inc.
- 当前专利权人: Intermolecular, Inc.
- 当前专利权人地址: US CA San Jose
- 主分类号: B08B3/00
- IPC分类号: B08B3/00
摘要:
A method for cleaning platinum residues from a surface of a substrate is provided. The method initiates with exposing the surface to a first solution containing a mixture of nitric acid and hydrochloric acid. Then, the surface is exposed to a second solution containing hydrochloric acid.