Invention Grant
US08785230B2 Localized surface plasmon resonance sensor using chalcogenide materials and method for manufacturing the same
有权
使用硫族化物材料的局部表面等离子体共振传感器及其制造方法
- Patent Title: Localized surface plasmon resonance sensor using chalcogenide materials and method for manufacturing the same
- Patent Title (中): 使用硫族化物材料的局部表面等离子体共振传感器及其制造方法
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Application No.: US13723555Application Date: 2012-12-21
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Publication No.: US08785230B2Publication Date: 2014-07-22
- Inventor: Taek Sung Lee , Kyeong Seok Lee , In Ho Kim , Wook Seong Lee , Doo Seok Jeong , Won Mok Kim , Byung Ki Cheong
- Applicant: Korea Institute of Science and Technology
- Applicant Address: KR Seoul
- Assignee: Korea Institute of Science and Technology
- Current Assignee: Korea Institute of Science and Technology
- Current Assignee Address: KR Seoul
- Agency: Ladas & Parry LLP
- Priority: KR10-2011-0144676 20111228
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L31/18 ; H01L31/032
Abstract:
A localized surface plasmon resonance sensor may include a localized surface plasmon excitation layer including a chalcogenide material. The chalcogenide material may include: a first material including at least one of selenium (Se) and tellurium (Te); and a second material including at least one of germanium (Ge) and antimony (Sb). The localized surface plasmon excitation layer may be prepared by forming a thin film including the chalcogenide material and crystallizing the thin film to have a predetermined pattern by irradiating laser on the thin film.
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