Invention Grant
- Patent Title: BEOL anti-fuse structures for gate last semiconductor devices
- Patent Title (中): 用于门最后半导体器件的BEOL反熔丝结构
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Application No.: US13942800Application Date: 2013-07-16
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Publication No.: US08785300B2Publication Date: 2014-07-22
- Inventor: Andreas Kurz , Jens Poppe
- Applicant: GlobalFoundries Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GlobalFoundries Inc.
- Current Assignee: GlobalFoundries Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Ditthavong & Steiner, P.C.
- Main IPC: H01L21/326
- IPC: H01L21/326 ; H01L21/479
Abstract:
An approach is provided for semiconductor devices including an anti-fuse structure. The semiconductor device includes a first metallization layer including a first portion of a first electrode and a second electrode, the second electrode being formed in a substantially axial plane surrounding the first portion of the first electrode, with a dielectric material in between the two electrodes. An ILD is formed over the first metallization layer, a second metallization layer including a second portion of the first electrode is formed over the ILD, and at least one via is formed through the ILD, electrically connecting the first and second portions of the first electrode. Breakdown of the dielectric material is configured to enable an operating current to flow between the second electrode and the first electrode in a programmed state of the anti-fuse structure.
Public/Granted literature
- US20130299940A1 BEOL ANTI-FUSE STRUCTURES FOR GATE LAST SEMICONDUCTOR DEVICES Public/Granted day:2013-11-14
Information query
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