发明授权
- 专利标题： Nanowire FET
- 专利标题（中）： 纳米线FET
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申请号： US12856129申请日： 2010-08-13
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公开(公告)号： US08785996B2公开(公告)日： 2014-07-22
- 发明人: Alan Colli , Richard White
- 申请人： Alan Colli , Richard White
- 申请人地址： FI Espoo
- 专利权人： Nokia Corporation
- 当前专利权人： Nokia Corporation
- 当前专利权人地址： FI Espoo
- 代理机构： Harrington & Smith
- 主分类号： H01L27/108
- IPC分类号： H01L27/108 ; G06N3/063 ; G06N3/067 ; G06N3/04 ; H01L31/113
摘要：
An apparatus including a first electrode; a second electrode; a nano-scale channel between the first electrode and the second electrode wherein the nano-scale channel has a first state in which an electrical impedance of the nano-scale channel is relatively high and a second state in which the electrical impedance of the nano-scale channel is relatively low; dielectric adjacent the nano-scale channel; and a gate electrode adjacent the dielectric configured to control a threshold number of quanta of stimulus, wherein the nano-scale channel is configured to switch between the first state and the second state in response to an application of a quantum of stimulus above the threshold number of quanta of stimulus.
公开/授权文献
- US20120038409A1 Nanotechnology 公开/授权日：2012-02-16
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