发明授权
US08786051B2 Transistor having a monocrystalline center section and a polycrystalline outer section, and narrow in-substrate collector region for reduced base-collector junction capacitance
有权
具有单晶中心部分和多晶外部部分的晶体管,以及用于降低的基极 - 集电极结电容的窄的衬底内集电极区域
- 专利标题: Transistor having a monocrystalline center section and a polycrystalline outer section, and narrow in-substrate collector region for reduced base-collector junction capacitance
- 专利标题(中): 具有单晶中心部分和多晶外部部分的晶体管,以及用于降低的基极 - 集电极结电容的窄的衬底内集电极区域
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申请号: US13401064申请日: 2012-02-21
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公开(公告)号: US08786051B2公开(公告)日: 2014-07-22
- 发明人: James W. Adkisson , David L. Harame , Qizhi Liu
- 申请人: James W. Adkisson , David L. Harame , Qizhi Liu
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Gibb & Riley, LLC
- 代理商 Michael J. Le Strange, Esq.
- 主分类号: H01L21/02
- IPC分类号: H01L21/02
摘要:
Disclosed are a transistor (e.g., bipolar junction transistor (BJT) or a heterojunction bipolar transistor (HBT)) and a method of forming the transistor with a narrow in-substrate collector region for reduced base-collector junction capacitance. The transistor has, within a substrate, a collector region positioned laterally adjacent to a trench isolation region. A relatively thin seed layer covers the trench isolation region and collector region. This seed layer has a monocrystalline center, which is aligned above and wider than the collector region (e.g., due to a solid phase epitaxy regrowth process), and a polycrystalline outer section. An intrinsic base layer is epitaxially deposited on the seed layer such that it similarly has a monocrystalline center section that is aligned above and wider than the collector region. An extrinsic base layer is the intrinsic base layer and has a monocrystalline extrinsic base-to-intrinsic base link-up region that is offset vertically from the collector region.