Invention Grant
- Patent Title: Gallium-nitride-on-handle substrate materials and devices and method of manufacture
- Patent Title (中): 镓氮化物处理衬底材料和器件及其制造方法
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Application No.: US13012674Application Date: 2011-01-24
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Publication No.: US08786053B2Publication Date: 2014-07-22
- Inventor: Mark P. D'Evelyn , Arpan Chakraborty , William Houck
- Applicant: Mark P. D'Evelyn , Arpan Chakraborty , William Houck
- Applicant Address: US CA Fremont
- Assignee: Soraa, Inc.
- Current Assignee: Soraa, Inc.
- Current Assignee Address: US CA Fremont
- Agency: Kilpatrick Townsend & Stockton LLP
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L31/0304 ; H01L31/0352 ; H01L31/036
Abstract:
A gallium and nitrogen containing substrate structure includes a handle substrate member having a first surface and a second surface and a transferred thickness of gallium and nitrogen material. The structure has a gallium and nitrogen containing active region grown overlying the transferred thickness and a recessed region formed within a portion of the handle substrate member. The substrate structure has a conductive material formed within the recessed region configured to transfer thermal energy from at least the transferred thickness of gallium and nitrogen material.
Public/Granted literature
- US20120187412A1 Gallium-Nitride-on-Handle Substrate Materials and Devices and Method of Manufacture Public/Granted day:2012-07-26
Information query
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