发明授权
- 专利标题: Magneto-resistance effect element and sensor
- 专利标题(中): 磁阻效应元件和传感器
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申请号: US12845992申请日: 2010-07-29
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公开(公告)号: US08786280B2公开(公告)日: 2014-07-22
- 发明人: Hiroshi Yamazaki , Hiraku Hirabayashi , Naoki Ohta
- 申请人: Hiroshi Yamazaki , Hiraku Hirabayashi , Naoki Ohta
- 申请人地址: JP Tokyo
- 专利权人: TDK Corporation
- 当前专利权人: TDK Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Oliff PLC
- 优先权: JP2009-179103 20090731
- 主分类号: G01R33/02
- IPC分类号: G01R33/02
摘要:
A magneto-resistance effect element for a sensor to sense a variation in externally applied magnetism includes a pinned layer having a fixed magnetization direction, a free layer having a magnetization direction which varies in response to an external magnetic field, and an intermediate layer provided between the pinned layer and the free layer. The pinned layer has a planar shape which is long in the fixed magnetization direction and which is short in a direction orthogonal to the fixed magnetization direction. Moreover, the pinned layer preferably has a planar shape in which the pinned layer is divided into a plurality of sections.
公开/授权文献
- US20110025322A1 MAGNETO-RESISTANCE EFFECT ELEMENT AND SENSOR 公开/授权日:2011-02-03