Invention Grant
US08786360B2 Circuit and method for fast switching of a current mirror with large MOSFET size
有权
具有大MOSFET尺寸的电流镜快速开关的电路和方法
- Patent Title: Circuit and method for fast switching of a current mirror with large MOSFET size
- Patent Title (中): 具有大MOSFET尺寸的电流镜快速开关的电路和方法
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Application No.: US11679364Application Date: 2007-02-27
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Publication No.: US08786360B2Publication Date: 2014-07-22
- Inventor: Justin Ang
- Applicant: Justin Ang
- Applicant Address: SG Singapore
- Assignee: STMicroelectronics Asia Pacific PTE, Ltd.
- Current Assignee: STMicroelectronics Asia Pacific PTE, Ltd.
- Current Assignee Address: SG Singapore
- Agency: Hogan Lovells US LLP
- Priority: SG200601485-6 20060307
- Main IPC: H03B1/00
- IPC: H03B1/00 ; H03K3/00 ; H03K17/04 ; G11C5/14 ; G05F1/10 ; G05F3/02 ; G05F3/26
Abstract:
The present invention discloses a fast switching current mirror circuit and method for generating fast switching current. The circuit and method for fast switching of a current mirror with large MOSFET size will save space and current consumption.
Public/Granted literature
- US20070210858A1 CIRCUIT AND METHOD FOR FAST SWITCHING OF A CURRENT MIRROR WITH LARGE MOSFET SIZE Public/Granted day:2007-09-13
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