Invention Grant
- Patent Title: Method for manufacturing display device
- Patent Title (中): 显示装置制造方法
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Application No.: US13761421Application Date: 2013-02-07
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Publication No.: US08790942B2Publication Date: 2014-07-29
- Inventor: Takahiro Tsuji , Koji Moriya
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2009-296066 20091225
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
One object is to provide a method for manufacturing a display device in which shift of the threshold voltage of a thin film transistor including an oxide semiconductor layer can be suppressed even when ultraviolet light irradiation is performed in the process for manufacturing the display device. In the method for manufacturing a display device, ultraviolet light irradiation is performed at least once, a thin film transistor including an oxide semiconductor layer is used for a switching element, and heat treatment for repairing damage to the oxide semiconductor layer caused by the ultraviolet light irradiation is performed after all the steps of ultraviolet light irradiation are completed.
Public/Granted literature
- US20130149798A1 METHOD FOR MANUFACTURING DISPLAY DEVICE Public/Granted day:2013-06-13
Information query
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