Invention Grant
- Patent Title: Method of depositing copper using physical vapor deposition
- Patent Title (中): 使用物理气相沉积法沉积铜的方法
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Application No.: US11641647Application Date: 2006-12-19
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Publication No.: US08791018B2Publication Date: 2014-07-29
- Inventor: Wen Yu , Stephen B. Robie , Jeremias D. Romero
- Applicant: Wen Yu , Stephen B. Robie , Jeremias D. Romero
- Applicant Address: US CA Sunnyvale
- Assignee: Spansion LLC
- Current Assignee: Spansion LLC
- Current Assignee Address: US CA Sunnyvale
- Main IPC: H01L21/441
- IPC: H01L21/441 ; H01L21/443 ; H01L21/283 ; H01L21/285 ; H01L23/532 ; H01L21/768
Abstract:
The present method of forming an electronic structure includes providing a tantalum base layer and depositing a layer of copper on the tantalum layer, the deposition being undertaken by physical vapor deposition with the temperature of the base layer at 50° C. or less, with the deposition taking place at a power level of 300 W or less.
Public/Granted literature
- US20080146028A1 Method of depositing copper using physical vapor deposition Public/Granted day:2008-06-19
Information query
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