发明授权
- 专利标题： Semiconductor device
- 专利标题（中）： 半导体器件
-
申请号： US13052152申请日： 2011-03-21
-
公开(公告)号： US08791517B2公开(公告)日： 2014-07-29
- 发明人: Hiroyuki Kutsukake , Yoshiko Kato , Yoshihisa Watanabe , Koichi Fukuda , Kazunori Masuda
- 申请人： Hiroyuki Kutsukake , Yoshiko Kato , Yoshihisa Watanabe , Koichi Fukuda , Kazunori Masuda
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2010-175693 20100804
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/92
摘要：
According to one embodiment, a semiconductor device includes at least one semiconductor region provided in a semiconductor substrate, and a capacitor group including a plurality of capacitors provided in the semiconductor region, each capacitor including a capacitor insulating film provided on the semiconductor region, a capacitor electrode provided on the capacitor insulating film, and at least one diffusion layer provided in the semiconductor region adjacent to the capacitor electrode.
公开/授权文献
- US20120032243A1 SEMICONDUCTOR DEVICE 公开/授权日：2012-02-09
信息查询
IPC分类:
