发明授权
- 专利标题： Methods of manufacturing metal-silicide features
- 专利标题（中）： 金属硅化物的制造方法
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申请号： US12861358申请日： 2010-08-23
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公开(公告)号： US08791528B2公开(公告)日： 2014-07-29
- 发明人: Chen-Tung Lin , Chih-Wei Chang , Chii-Ming Wu , Mei-Yun Wang , Chaing-Ming Chuang , Shau-Lin Shue
- 申请人： Chen-Tung Lin , Chih-Wei Chang , Chii-Ming Wu , Mei-Yun Wang , Chaing-Ming Chuang , Shau-Lin Shue
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Haynes and Boone, LLP
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/66
摘要：
A method of manufacturing a microelectronic device including forming a dielectric layer surrounding a dummy feature located over a substrate, removing the dummy feature to form an opening in the dielectric layer, and forming a metal-silicide layer conforming to the opening. The metal-silicide layer may then be annealed.
公开/授权文献
- US20100314698A1 METHODS OF MANUFACTURING METAL-SILICIDE FEATURES 公开/授权日：2010-12-16
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