Invention Grant
- Patent Title: Bandgap reference voltage generator
- Patent Title (中): 带隙参考电压发生器
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Application No.: US14098989Application Date: 2013-12-06
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Publication No.: US08791685B2Publication Date: 2014-07-29
- Inventor: Young Kyun Cho , Jae Ho Jung , Kwang Chun Lee
- Applicant: Electronics and Telecommunications Research Institute
- Applicant Address: KR Daejeon
- Assignee: Electronics and Telecommunications Research Institute
- Current Assignee: Electronics and Telecommunications Research Institute
- Current Assignee Address: KR Daejeon
- Agency: Nelson Mullins Riley & Scarborough LLP
- Priority: KR10-2012-0140935 20121206
- Main IPC: G05F3/30
- IPC: G05F3/30 ; G05F3/26

Abstract:
Disclosed is a bandgap reference voltage generator insensitive to changes of process, voltage, and temperature. A bandgap reference voltage generator may detect current having characteristic of CTAT and current having characteristic of PTAT which flow in a current compensation part included in an amplification part, and provide body voltage to one of two input transistors included in the amplification part in response to ratio of the two currents when the ratio is different from the preconfigured reference value. Thus, characteristics according to changes of parameters of elements and change of offset of the amplification part due to changes of PVT may be enhanced, and a characteristic of power supply rejection ratio (PSRR) may be enhanced.
Public/Granted literature
- US20140159700A1 BANDGAP REFERENCE VOLTAGE GENERATOR Public/Granted day:2014-06-12
Information query
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