发明授权
US08792281B2 Read threshold estimation in analog memory cells using simultaneous multi-voltage sense
有权
使用同时多电压检测在模拟存储单元中读取阈值估计
- 专利标题: Read threshold estimation in analog memory cells using simultaneous multi-voltage sense
- 专利标题(中): 使用同时多电压检测在模拟存储单元中读取阈值估计
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申请号: US13590816申请日: 2012-08-21
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公开(公告)号: US08792281B2公开(公告)日: 2014-07-29
- 发明人: Barak Baum , Eyal Gurgi
- 申请人: Barak Baum , Eyal Gurgi
- 申请人地址: US CA Cupertino
- 专利权人: Apple Inc.
- 当前专利权人: Apple Inc.
- 当前专利权人地址: US CA Cupertino
- 代理机构: Meyertons, Hood, Kivlin, Kowert & Goetzel, P.C.
- 主分类号: G11C16/06
- IPC分类号: G11C16/06 ; G11C16/26 ; G11C7/06
摘要:
A method includes dividing a group of analog memory cells into multiple subsets. The memory cells in the group are sensed simultaneously by performing a single sense operation, while applying to the subsets of the memory cells respective different sets of read thresholds, so as to produce respective readout results. An optimal set of the read thresholds is estimated by processing the multiple readout results obtained from the respective subsets using the different sets of the read thresholds.
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