发明授权
US08796042B2 Method for forming magnetic tunnel junction structure and method for forming magnetic random access memory using the same
有权
用于形成磁隧道结结构的方法和使用其形成磁性随机存取存储器的方法
- 专利标题： Method for forming magnetic tunnel junction structure and method for forming magnetic random access memory using the same
- 专利标题（中）： 用于形成磁隧道结结构的方法和使用其形成磁性随机存取存储器的方法
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申请号： US13286630申请日： 2011-11-01
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公开(公告)号： US08796042B2公开(公告)日： 2014-08-05
- 发明人: Hee-Ju Shin , Jun-Ho Jeong , Jang-Eun Lee , Se-Chung Oh
- 申请人： Hee-Ju Shin , Jun-Ho Jeong , Jang-Eun Lee , Se-Chung Oh
- 申请人地址： KR Gyeonggi-Do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Gyeonggi-Do
- 代理机构： Harness, Dickey & Pierce, P.L.C.
- 优先权： KR10-2010-0119756 20101129
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
A method of fabricating a magnetic tunnel junction structure includes forming a magnetic tunnel junction layer on a substrate. A mask pattern is formed on a region of the second magnetic layer. A magnetic tunnel junction layer pattern and a sidewall dielectric layer pattern on at least one sidewall of the magnetic tunnel junction layer pattern are formed by performing at least one etch process and at least one oxidation process multiple times. The at least one etch process may include a first etch process to etch a portion of the magnetic tunnel junction layer using an inert gas and the mask pattern to form a first etch product. The at least one oxidation process may include a first oxidation process to oxidize the first etch product attached on an etched side of the magnetic tunnel junction layer.
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