Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
-
Application No.: US13458809Application Date: 2012-04-27
-
Publication No.: US08796104B2Publication Date: 2014-08-05
- Inventor: Chang Eun Lee
- Applicant: Chang Eun Lee
- Applicant Address: KR Seoul
- Assignee: Dongbu Hitek Co., Ltd.
- Current Assignee: Dongbu Hitek Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Murabito Hao & Barnes LLP
- Agent Andrew D. Fortney
- Priority: KR10-2011-0105469 20111014
- Main IPC: H01L21/20
- IPC: H01L21/20
Abstract:
A semiconductor device and a method of manufacturing the same are disclosed. The semiconductor device includes a first insulation layer on or over a semiconductor substrate, metal patterns on or over the first insulation layer, a thin film resistor pattern disposed on or over the metal patterns, and an anti-reflection layer between the thin film resistor pattern and the metal patterns.
Public/Granted literature
- US20130093054A1 Semiconductor Device and Method of Manufacturing the Same Public/Granted day:2013-04-18
Information query
IPC分类:
