发明授权
- 专利标题： Nonvolatile storage device and method for manufacturing the same in which insulating film is located between first and second impurity diffusion regions but absent on first impurity diffusion region
- 专利标题（中）： 非易失性存储装置及其制造方法，其中绝缘膜位于第一和第二杂质扩散区之间但在第一杂质扩散区上不存在
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申请号： US13688903申请日： 2012-11-29
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公开(公告)号： US08796129B2公开(公告)日： 2014-08-05
- 发明人: Yukihide Tsuji
- 申请人： Nec Corporation
- 申请人地址： JP Tokyo
- 专利权人： NEC Corporation
- 当前专利权人： NEC Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Sughrue Mion, PLLC
- 优先权： JP2006-338196 20061215
- 主分类号： H01L21/3205
- IPC分类号： H01L21/3205 ; H01L21/4763 ; H01L29/40 ; H01L21/28 ; H01L27/115 ; H01L29/423 ; H01L29/66 ; H01L29/792
摘要：
Provided is an excellent nonvolatile storage device having advantageous in miniaturization and less variation in initial threshold value, and exhibiting a high writing efficiency, without an erasing failure and a retention failure. The nonvolatile storage device is characterized by including a film stack extending from between a semiconductor substrate and a gate electrode onto at least a surface of the gate electrode lying on a first impurity diffusion region side, the film stack including a charge accumulating layer and a tunnel insulating film sequentially from a gate electrode side.
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