发明授权
- 专利标题： Collector-up bipolar junction transistors in BiCMOS technology
- 专利标题（中）： 采用BiCMOS技术的双极结型晶体管
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申请号： US13769500申请日： 2013-02-18
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公开(公告)号： US08796149B1公开(公告)日： 2014-08-05
- 发明人: James W. Adkisson , David L. Harame , Qizhi Liu
- 申请人： International Business Machines Corporation
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Wood, Herron & Evans LLP
- 代理商 Michael J. Le Strange
- 主分类号： H01L21/311
- IPC分类号： H01L21/311
摘要：
Fabrication methods, device structures, and design structures for a bipolar junction transistor. An emitter is formed in a device region defined in a substrate. An intrinsic base is formed on the emitter. A collector is formed that is separated from the emitter by the intrinsic base. The collector includes a semiconductor material having an electronic bandgap greater than an electronic bandgap of a semiconductor material of the device region.
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