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US08796660B2 Nonvolatile memory element comprising a resistance variable element and a diode 有权
非易失性存储元件包括电阻可变元件和二极管

Nonvolatile memory element comprising a resistance variable element and a diode
Abstract:
A nonvolatile memory element (20) of the present invention comprises a resistance variable element (14) and a diode (18) which are formed on a substrate (10) such that the resistance variable element (14) has a resistance variable layer (11) sandwiched between a lower electrode (12) and an upper electrode (13), and the diode (18) which is connected in series with the resistance variable element (14) in the laminating direction and has an insulating layer or semiconductor layer (15) sandwiched between a first electrode (16) at the lower side and a second electrode (17) at the upper side. The resistance variable layer (11) is embedded in a first contact hole (21) formed on the lower electrode (12). A first area (22) where insulating layer or semiconductor layer (15) of the diode (18) is in contact with a first electrode (16) of the diode (18) is larger than at least one of a second area (23) where the resistance variable layer (11) is in contact with the upper electrode (13) and a third area (24) where the resistance variable layer (11) is in contact with the lower electrode (12).
Abstract(Chinese):

本发明的非易失性存储元件（20）包括形成在基板（10）上的电阻可变元件（14）和二极管（18），使得电阻可变元件（14）具有电阻变化层（11 ）和位于下电极（12）和上电极（13）之间的二极管（18），以及与电阻可变元件（14）在层叠方向上串联连接并具有绝缘层或半导体层（15）的二极管 ）夹在下侧的第一电极（16）和上侧的第二电极（17）之间。 电阻变化层（11）嵌入形成在下电极（12）上的第一接触孔（21）中。 二极管（18）的绝缘层或半导体层（15）与二极管（18）的第一电极（16）接触的第一区域（22）大于第二区域（23）中的至少一个， 其中电阻变化层（11）与上电极（13）接触，电阻变化层（11）与下电极（12）接触的第三区域（24）。

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