发明授权
- 专利标题: Light emitting diode
- 专利标题(中): 发光二极管
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申请号: US13479233申请日: 2012-05-23
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公开(公告)号: US08796716B2公开(公告)日: 2014-08-05
- 发明人: Zhen-Dong Zhu , Qun-Qing Li , Li-Hui Zhang , Mo Chen , Shou-Shan Fan
- 申请人: Zhen-Dong Zhu , Qun-Qing Li , Li-Hui Zhang , Mo Chen , Shou-Shan Fan
- 申请人地址: CN Beijing TW New Taipei
- 专利权人: Tsinghua University,Hon Hai Precision Industry Co., Ltd.
- 当前专利权人: Tsinghua University,Hon Hai Precision Industry Co., Ltd.
- 当前专利权人地址: CN Beijing TW New Taipei
- 代理机构: Novak Druce Connolly Bove + Quigg LLP
- 优先权: CN201110395467 20111203
- 主分类号: H01L33/00
- IPC分类号: H01L33/00
摘要:
A light emitting diode including a first semiconductor layer, an active layer, and a second semiconductor layer is provided. The first semiconductor layer includes a first surface and a second surface, and the first surface is connected to the substrate. The active layer and the second semiconductor layer are stacked on the second surface in that order, and a surface of the second semiconductor layer away from the active layer is configured as the light emitting surface. A first electrode covers the entire surface of the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of three-dimensional nano-structures are located on the surface of the first surface of the first semiconductor layer and aligned side by side, and a cross section of each of the three-dimensional nano-structure is M-shaped.
公开/授权文献
- US20130140596A1 LIGHT EMITTING DIODE 公开/授权日:2013-06-06
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