Invention Grant
US08796741B2 Semiconductor device and methods of making semiconductor device using graphene
有权
使用石墨烯制造半导体器件的半导体器件和方法
- Patent Title: Semiconductor device and methods of making semiconductor device using graphene
- Patent Title (中): 使用石墨烯制造半导体器件的半导体器件和方法
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Application No.: US13644720Application Date: 2012-10-04
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Publication No.: US08796741B2Publication Date: 2014-08-05
- Inventor: Shiqun Gu , Yang Du
- Applicant: Qualcomm Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agent Michelle S. Gallardo
- Main IPC: H01L27/10
- IPC: H01L27/10

Abstract:
A semiconductor device and methods of making a semiconductor device using graphene are described. A monolithic three dimensional integrated circuit device includes a first layer having first active devices. The monolithic three dimensional integrated circuit device also includes a second layer having second active devices that each include a graphene portion. The second layer can be fabricated on the first layer to form a stack of active devices. A base substrate may support the stack of active devices.
Public/Granted literature
- US20130082235A1 MONOLITHIC 3-D INTEGRATION USING GRAPHENE Public/Granted day:2013-04-04
Information query
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