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US08796741B2 Semiconductor device and methods of making semiconductor device using graphene 有权
使用石墨烯制造半导体器件的半导体器件和方法

  • Patent Title: Semiconductor device and methods of making semiconductor device using graphene
  • Patent Title (中): 使用石墨烯制造半导体器件的半导体器件和方法
  • Application No.: US13644720
    Application Date: 2012-10-04
  • Publication No.: US08796741B2
    Publication Date: 2014-08-05
  • Inventor: Shiqun GuYang Du
  • Applicant: Qualcomm Incorporated
  • Applicant Address: US CA San Diego
  • Assignee: QUALCOMM Incorporated
  • Current Assignee: QUALCOMM Incorporated
  • Current Assignee Address: US CA San Diego
  • Agent Michelle S. Gallardo
  • Main IPC: H01L27/10
  • IPC: H01L27/10
Semiconductor device and methods of making semiconductor device using graphene
Abstract:
A semiconductor device and methods of making a semiconductor device using graphene are described. A monolithic three dimensional integrated circuit device includes a first layer having first active devices. The monolithic three dimensional integrated circuit device also includes a second layer having second active devices that each include a graphene portion. The second layer can be fabricated on the first layer to form a stack of active devices. A base substrate may support the stack of active devices.
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