Invention Grant
US08796806B2 High-performance diode device structure and materials used for the same
有权
高性能二极管器件的结构和材料使用相同
- Patent Title: High-performance diode device structure and materials used for the same
- Patent Title (中): 高性能二极管器件的结构和材料使用相同
-
Application No.: US13929094Application Date: 2013-06-27
-
Publication No.: US08796806B2Publication Date: 2014-08-05
- Inventor: Gurtej Sandhu , Bhaskar Srinivasan
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dickstein Shapiro LLP
- Main IPC: H01L31/058
- IPC: H01L31/058 ; H01L29/06
Abstract:
A diode and memory device including the diode, where the diode includes a conductive portion and another portion formed of a first material that has characteristics allowing a first decrease in a resistivity of the material upon application of a voltage to the material, thereby allowing current to flow there through, and has further characteristics allowing a second decrease in the resistivity of the first material in response to an increase in temperature of the first material.
Public/Granted literature
- US20140014946A1 HIGH-PERFORMANCE DIODE DEVICE STRUCTURE AND MATERIALS USED FOR THE SAME Public/Granted day:2014-01-16
Information query
