Invention Grant
US08797783B1 Four capacitor nonvolatile bit cell 有权
四个电容器非易失性位单元

Four capacitor nonvolatile bit cell
Abstract:
A system on chip (SoC) provides a memory array of nonvolatile bitcells. Each bit cell includes two ferroelectric capacitors connected in series between a first plate line and a second plate line, such that a node Q is formed between the two ferroelectric capacitors. The first plate line and the second plate line are configured to provide a voltage approximately equal to first voltage while the bit cell is not being accessed. A clamping circuit is coupled to the node Q and is operable to clamp the node Q to a voltage approximately equal to first voltage while the bit cell is not being accessed.
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