Invention Grant
- Patent Title: Four capacitor nonvolatile bit cell
- Patent Title (中): 四个电容器非易失性位单元
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Application No.: US13753782Application Date: 2013-01-30
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Publication No.: US08797783B1Publication Date: 2014-08-05
- Inventor: Steven Craig Bartling , Sudhanshu Khanna
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent John R. Pessetto; Frederick J. Telecky, Jr.
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C11/22

Abstract:
A system on chip (SoC) provides a memory array of nonvolatile bitcells. Each bit cell includes two ferroelectric capacitors connected in series between a first plate line and a second plate line, such that a node Q is formed between the two ferroelectric capacitors. The first plate line and the second plate line are configured to provide a voltage approximately equal to first voltage while the bit cell is not being accessed. A clamping circuit is coupled to the node Q and is operable to clamp the node Q to a voltage approximately equal to first voltage while the bit cell is not being accessed.
Public/Granted literature
- US20140211532A1 Four Capacitor Nonvolatile Bit Cell Public/Granted day:2014-07-31
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