发明授权
- 专利标题: Adaptive read and write systems and methods for memory cells
- 专利标题(中): 自适应读写系统和存储单元的方法
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申请号: US13095094申请日: 2011-04-27
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公开(公告)号: US08799556B2公开(公告)日: 2014-08-05
- 发明人: Xueshi Yang , Gregory Burd
- 申请人: Xueshi Yang , Gregory Burd
- 申请人地址: BB St. Michael
- 专利权人: Marvell World Trade Ltd.
- 当前专利权人: Marvell World Trade Ltd.
- 当前专利权人地址: BB St. Michael
- 主分类号: G06F12/00
- IPC分类号: G06F12/00 ; G06F13/00 ; G06F13/28 ; G11C16/28 ; G11C16/10 ; G11C11/56
摘要:
An apparatus including: a plurality of multi-level memory cells configured to store data, wherein one or more of the multi-level memory cells are designated as pilot memory cells, and wherein each pilot memory cell is configured to store known, pre-determined data; an estimation block configured to, based on the known, pre-determined data, determine (i) estimated mean values of level distributions of the multi-level memory cells and (ii) estimated standard deviation values of level distributions of the multi-level memory cells; and a computation block configured to compute at least optimal or near optimal detection threshold values of level distributions of the multi-level memory cells based, at least in part, on (i) the estimated mean values and (ii) the estimated standard deviation values, wherein the optimal or near optimal detection threshold values are to be used in order to facilitate reading of the data stored in the multi-level memory cells.
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