发明授权
US08801853B2 Mechanism for controlling melt level in single crystal pulling apparatus, method for controlling melt level in single crystal pulling apparatus, mechanism for adjusting melt level in single crystal pulling apparatus and method for adjusting melt level while pulling single crystal
有权
用于控制单晶拉制装置中的熔融水平的机构，单晶拉制装置中熔融水平的控制方法，单晶拉制装置中熔融度的调节机理及拉晶单晶调整熔融度的方法
- 专利标题： Mechanism for controlling melt level in single crystal pulling apparatus, method for controlling melt level in single crystal pulling apparatus, mechanism for adjusting melt level in single crystal pulling apparatus and method for adjusting melt level while pulling single crystal
- 专利标题（中）： 用于控制单晶拉制装置中的熔融水平的机构，单晶拉制装置中熔融水平的控制方法，单晶拉制装置中熔融度的调节机理及拉晶单晶调整熔融度的方法
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申请号： US11488382申请日： 2006-07-17
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公开(公告)号： US08801853B2公开(公告)日： 2014-08-12
- 发明人: Keiichi Takanashi
- 申请人： Keiichi Takanashi
- 申请人地址： JP
- 专利权人： Sumco Corporation
- 当前专利权人： Sumco Corporation
- 当前专利权人地址： JP
- 代理机构： Kolisch Hartwell, P.C.
- 优先权： JP2005-213233 20050722
- 主分类号： C30B15/02
- IPC分类号： C30B15/02
摘要：
This mechanism for controlling a melt level includes: an optical recording device by which a real image of a furnace internal structural object and a reflected image reflected on the melt surface; and a processing device which, taking a value based on the real image as a reference value, controls the position of the melt surface based on a relationship of a position or a size of the reflected image, a distance between the reflected image and the real image, or amounts of changes thereof to the position of the melt surface. This mechanism for adjusting a melt level includes: the above mechanism for controlling a melt level; and a lifting mechanism which is controlled by the mechanism for controlling a melt level and adjusts the melt surface to the set position.
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