发明授权
US08802544B2 Method for manufacturing chip including a functional device formed on a substrate
有权
一种制造芯片的方法,其包括形成在基板上的功能元件
- 专利标题: Method for manufacturing chip including a functional device formed on a substrate
- 专利标题(中): 一种制造芯片的方法,其包括形成在基板上的功能元件
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申请号: US13389053申请日: 2011-07-19
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公开(公告)号: US08802544B2公开(公告)日: 2014-08-12
- 发明人: Hideki Shimoi , Keisuke Araki
- 申请人: Hideki Shimoi , Keisuke Araki
- 申请人地址: JP Hamamatsu-shi, Shizuoka
- 专利权人: Hamamatsu Photonics K.K.
- 当前专利权人: Hamamatsu Photonics K.K.
- 当前专利权人地址: JP Hamamatsu-shi, Shizuoka
- 代理机构: Drinker Biddle & Reath LLP
- 优先权: JP2010-167440 20100726
- 国际申请: PCT/JP2011/066344 WO 20110719
- 国际公布: WO2012/014716 WO 20120202
- 主分类号: H01L21/78
- IPC分类号: H01L21/78
摘要:
A method for manufacturing a chip constituted by a functional device formed on a substrate comprises a functional device forming step of forming the functional device on one main face of a sheet-like object to be processed made of silicon; a first modified region forming step of converging a laser light at the object so as to form a first modified region along the one main face of the object at a predetermined depth corresponding to the thickness of the substrate from the one main face; a second modified region forming step of converging the laser light at the object so as to form a second modified region extending such as to correspond to a side edge of the substrate as seen from the one main face on the one main face side in the object such that the second modified region joins with the first modified region along the thickness direction of the object; and an etching step of selectively advancing etching along the first and second modified regions after the first and second modified region forming steps so as to cut out a part of the object and form the substrate.
公开/授权文献
- US20120135585A1 METHOD FOR MANUFACTURING CHIP 公开/授权日:2012-05-31
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