发明授权
- 专利标题： III-V compound semiconductor epitaxy using lateral overgrowth
- 专利标题（中）： III-V化合物半导体外延使用横向过度生长
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申请号： US12538701申请日： 2009-08-10
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公开(公告)号： US08803189B2公开(公告)日： 2014-08-12
- 发明人: Chen-Hua Yu , Chia-Lin Yu , Ding-Yuan Chen , Wen-Chih Chiou , Hung-Ta Lin
- 申请人： Chen-Hua Yu , Chia-Lin Yu , Ding-Yuan Chen , Wen-Chih Chiou , Hung-Ta Lin
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater and Matsil, L.L.P.
- 主分类号： H01L33/00
- IPC分类号： H01L33/00
摘要：
A circuit structure includes a substrate; a patterned mask layer over the substrate, wherein the patterned mask layer includes a plurality of gaps; and a group-III group-V (III-V) compound semiconductor layer. The III-V compound semiconductor layer includes a first portion over the mask layer and second portions in the gaps, wherein the III-V compound semiconductor layer overlies a buffer/nucleation layer.
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