发明授权
US08803225B2 Tunneling field effect transistor having a lightly doped buried layer
有权
具有轻掺杂掩埋层的隧穿场效应晶体管
- 专利标题: Tunneling field effect transistor having a lightly doped buried layer
- 专利标题(中): 具有轻掺杂掩埋层的隧穿场效应晶体管
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申请号: US13695341申请日: 2012-09-06
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公开(公告)号: US08803225B2公开(公告)日: 2014-08-12
- 发明人: Ning Cui , Renrong Liang , Jing Wang , Jun Xu
- 申请人: Ning Cui , Renrong Liang , Jing Wang , Jun Xu
- 申请人地址: CN Beijing
- 专利权人: Tsinghua University
- 当前专利权人: Tsinghua University
- 当前专利权人地址: CN Beijing
- 代理机构: Houtteman Law LLC
- 国际申请: PCT/CN2012/081083 WO 20120906
- 国际公布: WO2013/104193 WO 20130718
- 主分类号: H01L29/76
- IPC分类号: H01L29/76 ; H01L29/94 ; H01L31/062 ; H01L31/113 ; H01L31/119
摘要:
A tunneling field effect transistor and a method for fabricating the same are provided. The tunneling field effect transistor includes: a semiconductor substrate and a drain layer formed in the semiconductor substrate, in which the drain layer is first type heavily doped; an epitaxial layer formed on the drain layer, with an isolation region formed in the epitaxial layer; a buried layer formed in the epitaxial layer, in which the buried layer is second type lightly doped; a source formed in the buried layer, in which the source is second type heavily doped; a gate dielectric layer formed on the epitaxial layer, and a gate formed on the gate dielectric layer; and a source metal contact layer formed on the source, and a drain metal contact layer formed under the drain layer.