发明授权
- 专利标题: Method of defect inspection and device of defect inspection
- 专利标题(中): 缺陷检查方法和缺陷检查装置
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申请号: US13265935申请日: 2010-04-22
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公开(公告)号: US08804112B2公开(公告)日: 2014-08-12
- 发明人: Yukihiro Shibata , Toshihiko Nakata , Taketo Ueno , Atsushi Taniguchi , Toshifumi Honda
- 申请人: Yukihiro Shibata , Toshihiko Nakata , Taketo Ueno , Atsushi Taniguchi , Toshifumi Honda
- 申请人地址: JP Tokyo
- 专利权人: Hitachi High-Technologies Corporation
- 当前专利权人: Hitachi High-Technologies Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Antonelli, Terry, Stout & Kraus, LLP.
- 优先权: JP2009-105913 20090424
- 国际申请: PCT/JP2010/057164 WO 20100422
- 国际公布: WO2010/123074 WO 20101028
- 主分类号: G01N21/00
- IPC分类号: G01N21/00
摘要:
A method of inspecting defects and a device inspecting defects of detecting defects at high sensitivity and high capture efficiency even on various patterns existing on a wafer. In the device of inspecting defects, an illumination optical system is formed of two systems of a coherent illumination of a laser 5 and an incoherent illumination of LEDs 6a, 6b, 6c and 6d, and light paths are divided in a detecting system corresponding to respective illumination light, spatial modulation elements 55a and 55b are arranged to detecting light paths, respectively, scattered light inhibiting sensitivity is shielded by the spatial modulating elements 55a and 55b, scattered light transmitted through the spatial modulation elements 55a and 55b is detected by image sensors 90a and 90b arranged to respective light paths, and images detected by these two image sensors 90a and 90b are subjected to a comparison processing, thereby determining a defect candidate.