发明授权
US08804290B2 Electrostatic discharge protection circuit having buffer stage FET with thicker gate oxide than common-source FET
有权
具有比共源FET更厚的栅极氧化物的缓冲级FET的静电放电保护电路
- 专利标题： Electrostatic discharge protection circuit having buffer stage FET with thicker gate oxide than common-source FET
- 专利标题（中）： 具有比共源FET更厚的栅极氧化物的缓冲级FET的静电放电保护电路
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申请号： US13351395申请日： 2012-01-17
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公开(公告)号： US08804290B2公开(公告)日： 2014-08-12
- 发明人: Jonathan Brodsky
- 申请人： Jonathan Brodsky
- 申请人地址： US TX Dallas
- 专利权人： Texas Instruments Incorporated
- 当前专利权人： Texas Instruments Incorporated
- 当前专利权人地址： US TX Dallas
- 代理商 Jacqueline J. Garner; Frederick J. Telecky, Jr.
- 主分类号： H02H9/04
- IPC分类号： H02H9/04
摘要：
An active-FET ESD cell (300) for protecting an I/O pad (301) includes a first MOS transistor (310) with a gate oxide (315) of a first thickness and a second MOS transistor (320) with a gate oxide (325) of a second thickness greater than the first thickness at least by the amount required to handle the source-follower threshold voltage, the first transistor having its drain (313) tied to the I/O pad, its source (311) tied to ground, and its gate (312) tied to the source (321) of the second transistor and resistively connected to ground (340), and the second transistor having its drain (323) tied to the I/O pad and its gate tied to a capacitor (330) connected to the I/O pad and to a resistor (331) connected to ground.
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