发明授权
US08804417B2 Nonvolatile memory device including dummy memory cell and program method thereof
有权
包括虚拟存储器单元的非易失性存储器件及其程序方法
- 专利标题: Nonvolatile memory device including dummy memory cell and program method thereof
- 专利标题(中): 包括虚拟存储器单元的非易失性存储器件及其程序方法
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申请号: US13157343申请日: 2011-06-10
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公开(公告)号: US08804417B2公开(公告)日: 2014-08-12
- 发明人: Chan Park , Changseok Kang , Sung-Il Chang , Byeong-In Choe
- 申请人: Chan Park , Changseok Kang , Sung-Il Chang , Byeong-In Choe
- 申请人地址: KR Suwon-si, Gyeonggi-do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-si, Gyeonggi-do
- 代理机构: Volentine & Whitt, PLLC
- 优先权: KR10-2010-0055561 20100611
- 主分类号: G11C16/04
- IPC分类号: G11C16/04 ; G11C16/06 ; G11C16/08 ; G11C16/10 ; G11C16/12 ; G11C16/22
摘要:
A nonvolatile memory device including a dummy memory cell and a method of programming the same, wherein the nonvolatile memory device includes a dummy memory cell, and a plurality of memory cells serially connected to the dummy memory cell. The nonvolatile memory device sets a voltage provided to the dummy memory cell according to a distance between a selected memory cell among the plurality of memory cells and the dummy memory cell when a program operation is performed.
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