Invention Grant
- Patent Title: Method for forming pattern
- Patent Title (中): 形成图案的方法
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Application No.: US13769907Application Date: 2013-02-19
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Publication No.: US08808974B2Publication Date: 2014-08-19
- Inventor: Yukio Nishimura , Kaori Sakai , Nobuji Matsumura , Makoto Sugiura , Atsushi Nakamura , Gouji Wakamatsu , Yuusuke Anno
- Applicant: JSR Corporation
- Applicant Address: JP Tokyo
- Assignee: JSR Corporation
- Current Assignee: JSR Corporation
- Current Assignee Address: JP Tokyo
- Agency: Ditthavong & Steiner, P.C.
- Priority: JP2007-084586 20070328; JP2008-030850 20080212
- Main IPC: G03F7/20
- IPC: G03F7/20 ; G03F7/40 ; G03F7/00 ; G03F7/039

Abstract:
A method for forming a pattern includes providing a first positive-working radiation-sensitive resin composition on a substrate to form a first resist layer. The first positive-working radiation-sensitive resin composition includes a crosslinking agent, a polymer containing an acid-unstable group and not containing a crosslinking group, a radiation-sensitive acid generator, and a solvent. The first resist layer is exposed selectively to radiation, and developed to form a first resist pattern. The first resist pattern is made inactive to radiation, or insolubilized in an alkaline developer or in a second positive-working radiation-sensitive resin composition. The second positive-working radiation-sensitive resin composition is provided on the substrate to form a second resist layer. The second resist layer is exposed selectively to radiation, and developed to form a second resist pattern in the space area of the first resist pattern.
Public/Granted literature
- US20130164695A1 METHOD FOR FORMING PATTERN Public/Granted day:2013-06-27
Information query
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