Invention Grant
- Patent Title: High density serial capacitor device and methods of making such a capacitor device
- Patent Title (中): 高密度串联电容器及其制造方法
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Application No.: US13712234Application Date: 2012-12-12
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Publication No.: US08809149B2Publication Date: 2014-08-19
- Inventor: Ki Young Lee , Sanggil Bae , Tony Joung
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Amerson Law Firm, PLLC
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L29/788

Abstract:
A serial capacitor comprised of a bottom electrode, a top electrode that is conductively coupled the bottom electrode, a middle electrode positioned between the bottom and top electrode, a lower dielectric layer positioned between the bottom and middle electrodes, and an upper dielectric layer positioned between the middle and the electrodes. A method includes forming the bottom electrode in a first layer of insulating material, forming the lower dielectric layer and the middle electrode above the bottom electrode, wherein the middle electrode is positioned in a second layer of insulating material, forming the upper dielectric layer above the middle electrode, forming an opening that exposes a portion of the bottom electrode, and forming the top electrode above the upper dielectric layer, wherein a portion of the top electrode extends through the opening and contacts the bottom electrode.
Public/Granted literature
- US20140159199A1 HIGH DENSITY SERIAL CAPACITOR DEVICE AND METHODS OF MAKING SUCH A CAPACITOR DEVICE Public/Granted day:2014-06-12
Information query
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