发明授权
US08809178B2 Methods of forming bulk FinFET devices with replacement gates so as to reduce punch through leakage currents
有权
用替换栅极形成大量FinFET器件的方法,以减少冲击穿过漏电流
- 专利标题: Methods of forming bulk FinFET devices with replacement gates so as to reduce punch through leakage currents
- 专利标题(中): 用替换栅极形成大量FinFET器件的方法,以减少冲击穿过漏电流
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申请号: US13408139申请日: 2012-02-29
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公开(公告)号: US08809178B2公开(公告)日: 2014-08-19
- 发明人: Yanxiang Liu , Michael Hargrove , Xiaodong Yang , Hans van Meer , Laegu Kang , Christian Gruensfelder , Srikanth Samavedam
- 申请人: Yanxiang Liu , Michael Hargrove , Xiaodong Yang , Hans van Meer , Laegu Kang , Christian Gruensfelder , Srikanth Samavedam
- 申请人地址: KY Grand Cayman
- 专利权人: GLOBALFOUNDRIES Inc.
- 当前专利权人: GLOBALFOUNDRIES Inc.
- 当前专利权人地址: KY Grand Cayman
- 代理机构: Amerson Law Firm, PLLC
- 主分类号: H01L21/4763
- IPC分类号: H01L21/4763
摘要:
One illustrative method disclosed herein includes forming a plurality of spaced-apart trenches in a semiconducting substrate to thereby define a fin structure for the device, forming a local isolation region within each of the trenches, forming a sacrificial gate structure on the fin structure, wherein the sacrificial gate structure comprises at least a sacrificial gate electrode, and forming a layer of insulating material above the fin structure and within the trench above the local isolation region. In this example, the method further includes performing at least one etching process to remove the sacrificial gate structure to thereby define a gate cavity, after removing the sacrificial gate structure, performing at least one etching process to form a recess in the local isolation region, and forming a replacement gate structure that is positioned in the recess in the local isolation region and in the gate cavity.