发明授权
- 专利标题： Interconnect structure with a planar interface between a selective conductive cap and a dielectric cap layer
- 专利标题（中）： 互连结构与选择性导电盖和电介质盖层之间的平面界面
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申请号： US12887010申请日： 2010-09-21
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公开(公告)号： US08809183B2公开(公告)日： 2014-08-19
- 发明人: Griselda Bonilla , Lawrence A. Clevenger , Elbert E. Huang , Satyanarayana V. Nitta , Shom Ponoth
- 申请人： Griselda Bonilla , Lawrence A. Clevenger , Elbert E. Huang , Satyanarayana V. Nitta , Shom Ponoth
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Scully, Scott, Murphy & Presser, P.C.
- 代理商 Wenjie Li
- 主分类号： H01L21/4763
- IPC分类号： H01L21/4763
摘要：
A selective conductive cap is deposited on exposed metal surfaces of a metal line by electroless plating selective to exposed underlying dielectric surfaces of a metal interconnect structure. A dielectric material layer is deposited on the selective conductive cap and the exposed underlying dielectric layer without a preclean. The dielectric material layer is planarized to form a horizontal planar surface that is coplanar with a topmost surface of the selective conductive cap. A preclean is performed and a dielectric cap layer is deposited on the selective conductive cap and the planarized surface of the dielectric material layer. Because the interface including a surface damaged by the preclean is vertically offset from the topmost surface of the metal line, electromigration of the metal in the metal line along the interface is reduced or eliminated.
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