A solid-state image sensor according to the present invention includes: a semiconductor layer (100 with first and second surfaces (100a, 100b), the second surface (100b) being opposite to the first surface (100a); a plurality of photosensitive cells (1a, 1b, etc.), which are arranged two-dimensionally in the semiconductor layer (100) between the first and second surfaces thereof (100a, 100b); a first array (200) of micro condenser lenses, which are arranged on the same side as the first surface (100a) to focus incoming light onto a first group of photosensitive cells that are included in those photosensitive cells; and a second array (300) of micro condenser lenses, which are arranged on the same side as the second surface (100b) to focus incoming light onto a second group of photosensitive cells that are also included in those photosensitive cells but that are different from the first group of photosensitive cells.