发明授权
- 专利标题: Photomask inspection method, semiconductor device inspection method, and pattern inspection apparatus
- 专利标题(中): 光掩模检查方法,半导体器件检查方法和图案检查装置
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申请号: US12533321申请日: 2009-07-31
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公开(公告)号: US08811713B2公开(公告)日: 2014-08-19
- 发明人: Ryoji Yoshikawa
- 申请人: Ryoji Yoshikawa
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- 优先权: JP2008-227177 20080904
- 主分类号: G06K9/00
- IPC分类号: G06K9/00 ; G03H1/04 ; G06F17/50
摘要:
A plurality of photomasks used to manufacture the same semiconductor device, each of the photomasks having a plurality of mutually replaceable unit regions set therein, are inspected to detect a defect. It is determined whether or not the detected defect has a redundancy defect positioned in a unit region replaceable with another unit region to remedy the photomask. Then, when inspecting the second or subsequent photomask, a unit region including the coordinate of a redundancy defect detected in another photomask inspected previously is set to be a non-inspection region, and the non-inspection region is not inspected.
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