Invention Grant
- Patent Title: System and method for controlling nonvolatile memory
- Patent Title (中): 用于控制非易失性存储器的系统和方法
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Application No.: US13430850Application Date: 2012-03-27
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Publication No.: US08812775B2Publication Date: 2014-08-19
- Inventor: Byoung Geun Kim
- Applicant: Byoung Geun Kim
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2011-0027728 20110328
- Main IPC: G06F12/02
- IPC: G06F12/02

Abstract:
A memory system, comprises a nonvolatile memory comprising multiple memory cells, and a memory controller configured to control respective cell levels of the memory cells by assigning a logical address of each memory cell to one of multiple address groups according to a frequency with which the logical address has been accessed, determining a cell level for each address group, and controlling each memory cell to have the cell level of the address group to which its logical address is assigned.
Public/Granted literature
- US20120254581A1 SYSTEM AND METHOD FOR CONTROLLING NONVOLATILE MEMORY Public/Granted day:2012-10-04
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