发明授权
- 专利标题: Environmentally-assisted technique for transferring devices onto non-conventional substrates
- 专利标题(中): 用于将设备转移到非常规基板上的环境辅助技术
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申请号: US13791214申请日: 2013-03-08
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公开(公告)号: US08815707B2公开(公告)日: 2014-08-26
- 发明人: Chi-Hwan Lee , Dong Rip Kim , Xiaolin Zheng
- 申请人: Chi-Hwan Lee , Dong Rip Kim , Xiaolin Zheng
- 申请人地址: US CA Palo Alto
- 专利权人: Board of Trustess of the Leland Stanford Junior University
- 当前专利权人: Board of Trustess of the Leland Stanford Junior University
- 当前专利权人地址: US CA Palo Alto
- 代理机构: Foley & Lardner LLP
- 代理商 Cliff Z. Liu
- 主分类号: H01L23/31
- IPC分类号: H01L23/31 ; H01L31/18 ; B05D5/00
摘要:
A device fabrication method includes: (1) providing a growth substrate including a base and an oxide layer disposed over the base; (2) forming a metal layer over the oxide layer; (3) forming a stack of device layers over the metal layer; (4) performing interfacial debonding of the metal layer to separate the stack of device layers and the metal layer from the growth substrate; and (5) affixing the stack of device layers to a target substrate.
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