发明授权
- 专利标题： Semiconductor device comprising oxide semiconductor layer
- 专利标题（中）： 包括氧化物半导体层的半导体器件
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申请号： US12898357申请日： 2010-10-05
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公开(公告)号： US08816349B2公开(公告)日： 2014-08-26
- 发明人: Shunpei Yamazaki , Jun Koyama , Masahiro Takahashi , Hideyuki Kishida , Akiharu Miyanaga , Junpei Sugao , Hideki Uochi , Yasuo Nakamura
- 申请人： Shunpei Yamazaki , Jun Koyama , Masahiro Takahashi , Hideyuki Kishida , Akiharu Miyanaga , Junpei Sugao , Hideki Uochi , Yasuo Nakamura
- 申请人地址： JP Kanagawa-ken
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JP Kanagawa-ken
- 代理机构： Fish & Richardson P.C.
- 优先权： JP2009-235791 20091009
- 主分类号： H01L27/14
- IPC分类号： H01L27/14
摘要：
By using a conductive layer including Cu as a long lead wiring, increase in wiring resistance is suppressed. Further, the conductive layer including Cu is provided in such a manner that it does not overlap with the oxide semiconductor layer in which a channel region of a TFT is formed, and is surrounded by insulating layers including silicon nitride, whereby diffusion of Cu can be prevented; thus, a highly reliable semiconductor device can be manufactured. Specifically, a display device which is one embodiment of a semiconductor device can have high display quality and operate stably even when the size or definition thereof is increased.