发明授权
- 专利标题: Metal-oxide semiconductor transistor
- 专利标题(中): 金属氧化物半导体晶体管
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申请号: US12837475申请日: 2010-07-15
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公开(公告)号: US08816409B2公开(公告)日: 2014-08-26
- 发明人: Ming-Te Wei , Wen-Chen Wu , Lung-En Kuo , Po-Chao Tsao
- 申请人: Ming-Te Wei , Wen-Chen Wu , Lung-En Kuo , Po-Chao Tsao
- 申请人地址: TW Science-Based Industrial Park, Hsin-Chu
- 专利权人: United Microelectronics Corp.
- 当前专利权人: United Microelectronics Corp.
- 当前专利权人地址: TW Science-Based Industrial Park, Hsin-Chu
- 代理商 Winston Hsu; Scott Margo
- 主分类号: H01L21/00
- IPC分类号: H01L21/00 ; H01L29/165 ; H01L21/8238 ; H01L29/66 ; H01L29/78
摘要:
A method for fabricating a metal-oxide semiconductor (MOS) transistor is disclosed. The method includes the steps of: providing a semiconductor substrate; forming a silicon layer on the semiconductor substrate; performing a first photo-etching process on the silicon layer for forming a gate pattern; forming an epitaxial layer in the semiconductor substrate adjacent to two sides of the gate pattern; and performing a second photo-etching process on the gate pattern to form a slot in the gate pattern while using the gate pattern to physically separate the gate pattern into two gates.
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